advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 30v simple drive requirement r ds(on) 9m fast switching characteristic i d 51a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.2 /w rthj-a 62.5 /w data & specifications subject to change without notice AP0903GH 39 rohs-compliant product parameter rating drain-source voltage 30 total power dissipation gate-source voltage 20 continuous drain current 51 continuous drain current 32.5 pulsed drain current 1 200 storage temperature range operating junction temperature range -55 to 150 -55 to 150 200812112 1 thermal data parameter maximum thermal resistance, junction-ambient (pcb mount) 3 g d s to-252(h) a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 30 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 9 m ? ? ,
AP0903GH fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7 .0v 6.0v 5.0 v v g =4.0v 0 40 80 120 160 0.0 1.0 2.0 3.0 4.0 5.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0 v 6.0v 5.0 v v g = 4.0 v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 4 8 12 16 20 0 0.4 0.8 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 6 8 10 12 14 16 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =20a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
AP0903GH fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 0246810 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =15v v ds =18v v ds =24v 0 200 400 600 800 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90%
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